IRFR5305TRPBF vs BSC060P03NS3EGATMA1 Comparison

Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and BSC060P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active
Infineon
BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΞ© 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 βœ“ Active

Specification Comparison

Parameter IRFR5305TRPBF BSC060P03NS3EGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.38
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) Max -55 V β€”
Continuous Drain Current (ID) at TC=25C 31 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm β€”
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V β€”
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] β€”
Power Dissipation (PD) at TC=25C 110 W β€”
Single-Pulse Avalanche Energy (EAS) 270 mJ β€”
Operating Temperature Range -55 C to +175 C -55Β°C to +150Β°C
Package TO-252AA (DPAK) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) OptiMOSβ„’ P-channel Trench
MSL Level 1 β€”
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) β€”
Drain-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (Ta) β€” 17.7 A
Continuous Drain Current (Tc) β€” 100 A
On-State Resistance RDS(on) max @ VGS=10V β€” 6 mΞ©
Gate Threshold Voltage VGS(th) typ β€” -2.5 V
Total Gate Charge Qg @ VGS=10V β€” 81 nC
Input Capacitance Ciss β€” 6.02 nF
Output Capacitance Coss β€” 2.81 nF
Reverse Transfer Capacitance Crss β€” 220 pF
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 83 W

Datasheets & Resources

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