IRFR5305TRPBF vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5305TRPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.28 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | 31 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 110 W | β |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | 290 mJ |
| Operating Temperature Range | -55 C to +175 C | -55Β°C to +175Β°C (TJ) |
| Package | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | OptiMOSβ’ P (Trench) |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | -70 A |
| Pulsed Drain Current (IDM) | β | -280 A |
| RDS(on) max @ VGS = -10 V | β | 4.2 mΞ© |
| RDS(on) max @ VGS = -4.5 V | β | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | β | -1.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25Β°C) | β | 150 W |