IRFR5305TRPBF vs IRF4905STRRPBF Comparison
Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and IRF4905STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5305TRPBF | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.94 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | 31 A | -74 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 110 W | 170 W |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Drain-Source Voltage (VDS) | β | -55 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max at VGS=-10V | β | 20 mOhm |
| RDS(on) max at VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | β | 120 nC |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free | β | Yes |