IRFR5305TRPBF vs IRF5305STRRPBF Comparison
Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and IRF5305STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5305TRPBF | IRF5305STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.62 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | 31 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 110 W | β |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Pb-free PBF suffix) | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Transistor Type | β | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -31 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max @ VGS=-10V | β | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | β | 110 W |
| Power Dissipation (TA) | β | 3.8 W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / RoHS | β | Yes (Pb-free suffix) |
| Packaging | β | Tape & Reel (TR) |