IRFR5305TRPBF vs IRFR1205TRPBF Comparison
Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5305TRPBF | IRFR1205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.49 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) Max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | 31 A | 44 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 110 W | β |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant (PBF suffix = lead-free) |
| Lead-Free Finish | Yes (PBF suffix) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 55 V |
| Pulsed Drain Current (IDM) | β | 160 A |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | β | 27 mOhm max |
| Total Gate Charge (Qg) | β | 43.3 nC |
| Power Dissition (PD) at TC=25C | β | 107 W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen status] |