IRFR5410TRPBF vs BSC060P03NS3EGATMA1 Comparison

Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and BSC060P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΞ© 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 βœ“ Active

Specification Comparison

Parameter IRFR5410TRPBF BSC060P03NS3EGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.38
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -30 V
Continuous Drain Current (ID) at TC = 25 Β°C -13 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) typ 70 nC β€”
Package TO-252AA (DPAK), surface mount PG-TDSON-8-1 (SuperSO8 5x6)
Power Dissition (PD) at TC = 25 Β°C 66 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55Β°C to +150Β°C
Mounting Type Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) OptiMOSβ„’ P-channel Trench
Avalanche Rated Yes (fully avalanche rated) β€”
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A β€”
Continuous Drain Current (Ta) β€” 17.7 A
Continuous Drain Current (Tc) β€” 100 A
On-State Resistance RDS(on) max @ VGS=10V β€” 6 mΞ©
Gate Threshold Voltage VGS(th) typ β€” -2.5 V
Total Gate Charge Qg @ VGS=10V β€” 81 nC
Input Capacitance Ciss β€” 6.02 nF
Output Capacitance Coss β€” 2.81 nF
Reverse Transfer Capacitance Crss β€” 220 pF
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 83 W
RoHS Status β€” Compliant

Datasheets & Resources

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