IRFR5410TRPBF vs IRFR1018ETRPBF Comparison

Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRFR1018ETRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5410TRPBF IRFR1018ETRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.36
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V β€”
Continuous Drain Current (ID) at TC = 25 Β°C -13 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) typ 70 nC β€”
Package TO-252AA (DPAK), surface mount TO-252AA (D-Pak)
Power Dissition (PD) at TC = 25 Β°C 66 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55 Β°C to +175 Β°C
Mounting Type Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating] 1
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) β€” 79 A (Tc)
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Rds(on) Max @ Vgs=10V β€” 8.4 mΞ©
Rds(on) Max @ Vgs=4.5V β€” [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) β€” 2.0 V to 4.0 V
Total Gate Charge (Qg) β€” 46 nC
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: Crss]
Maximum Power Dissipation (Pd) β€” 110 W (Tc)
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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