IRFR5410TRPBF vs IRFR120NTRPBF Comparison
Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
IRFR5410TRPBF β ActiveSpecification Comparison
| Parameter | IRFR5410TRPBF | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.26 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -100 V | β |
| Continuous Drain Current (ID) at TC = 25 Β°C | -13 A | β |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Total Gate Charge (Qg) typ | 70 nC | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 Β°C | 66 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | Lead-Free, RoHS Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | β |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | β | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | β | 16.7 nC |
| Gate-to-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | β | -55C to +175C |
| Channel Type | β | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | β | [DATA_NEEDED: RthJC] |