IRFR5410TRPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5410TRPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.38
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC = 25 Β°C -13 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V Β±20 V
Total Gate Charge (Qg) typ 70 nC β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Power Dissition (PD) at TC = 25 Β°C 66 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) β€”
Mounting Type Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET fifth-generation planar MOSFET
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A β€”
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -31 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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