IRFR5410TRPBF vs IRFR5410TRRPBF Comparison
Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRFR5410TRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
IRFR5410TRPBF β ActiveSpecification Comparison
| Parameter | IRFR5410TRPBF | IRFR5410TRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.49 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | β |
| Continuous Drain Current (ID) at TC = 25 Β°C | -13 A | β |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Total Gate Charge (Qg) typ | 70 nC | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 Β°C | 66 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (5th Generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | β |
| FET Type | β | MOSFET (Metal Oxide Semiconductor) |
| VDS (Drain-Source Voltage) | β | -100 V |
| VGS (Gate-Source Voltage) | β | Β±20 V |
| VGS(th) (Gate Threshold) | β | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | β | -13 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at 100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | β | 205 mΞ© |
| RDS(on) typical at VGS=-10V | β | 26 mΞ© (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | β | 70 nC |
| Power Dissipation (Pd) at Tc=25C | β | 66 W |
| Operating Junction Temperature | β | -55C to +150C |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free) |