IRFR5410TRPBF vs IRLR2905TRPBF Comparison

Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRLR2905TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF βœ“ Active

Specification Comparison

Parameter IRFR5410TRPBF IRLR2905TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.61
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V β€”
Continuous Drain Current (ID) at TC = 25 Β°C -13 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) typ 70 nC β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Power Dissition (PD) at TC = 25 Β°C 66 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) β€”
Mounting Type Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (IR MOSFET, fifth generation)
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A β€”
FET Type β€” N-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max @ VGS=10V β€” 27 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Gate Charge (Qg) β€” 32 nC
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Lead-Free / RoHS β€” Yes / Compliant
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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