IRFR5410TRRPBF vs IRLZ34NSTRLPBF Comparison
Detailed side-by-side comparison of IRFR5410TRRPBF by Infineon and IRLZ34NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5410TRRPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.58 |
| Polarity | P-Channel | β |
| FET Type | MOSFET (Metal Oxide Semiconductor) | N-Channel |
| Technology | HEXFET (5th Generation) | β |
| VDS (Drain-Source Voltage) | -100 V | β |
| VGS (Gate-Source Voltage) | Β±20 V | β |
| VGS(th) (Gate Threshold) | -2 V to -4 V | β |
| Continuous Drain Current (ID) at Tc=25C | -13 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| RDS(on) max at VGS=-10V | 205 mΞ© | β |
| RDS(on) typical at VGS=-10V | 26 mΞ© (per Mouser listing for IRFR5410TRPBF) | β |
| Total Gate Charge (Qg) | 70 nC | 16.7 nC |
| Power Dissipation (Pd) at Tc=25C | 66 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | TO-252AA (DPAK) | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | β |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | β |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC | β | 30 A |
| RDS(on) at VGS=5V | β | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 68 W |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single with built-in diode |
| Switching Frequency Optimization | β | Below 100 kHz |
| Cell Structure | β | HEXFET planar (5th generation) |
| Qualification | β | JEDEC standard |
| RoHS Status | β | Compliant (Pb-free) |