IRFR5505TRLPBF vs IRF9Z34NPBF Comparison

Detailed side-by-side comparison of IRFR5505TRLPBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5505TRLPBF IRF9Z34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.65
Polarity P-Channel
MOSFET Operating Mode Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Operating Temperature Range -55 °C to +175 °C -55C to +175C (junction)
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Technology IR MOSFET™ (HEXFET® generation 5) HEXFET (5th generation)
Package TO-252AA (DPAK), surface mount TO-220AB (through-hole, 3-pin)
Mounting Type Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix)
MSL Level 1
Manufacturer Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel
Drain-Source Voltage (Vds) -55 V
Continuous Drain Current (Id) at Tc=25C -19 A
Pulsed Drain Current (Idm) -72 A
Power Dissipation (Pd) at Tc=25C 68 W
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free Yes (PBF suffix)
RoHS Status Compliant

Datasheets & Resources

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