IRFR5505TRPBF vs IRLU024NPBF Comparison
Detailed side-by-side comparison of IRFR5505TRPBF by Infineon and IRLU024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5505TRPBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.61 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | β |
| Polarity | P-Channel | β |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -18 A | 17 A |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | β |
| Total Gate Charge (Qg) | 21.3 nC | 10 nC (typical, per listing) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Rise Time (tr) | [DATA_NEEDED: tr] | β |
| Fall Time (tf) | [DATA_NEEDED: tf] | β |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | 110 C/W (50 C/W PCB-mounted) |
| Package | TO-252AA (DPAK), surface mount | IPAK (TO-251AA), Through Hole |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant (PBF suffix) | β |
| Lead-Free | Yes (PBF suffix) | β |
| Part Number | β | IRLU024NPBF |
| FET Type | β | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| On-Resistance RDS(on) max at VGS=10V | β | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | β | 45 W |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free plating) |
| Qualification | β | JEDEC standard |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |