IRFS4010TRLPBF vs IRLZ34NSTRLPBF Comparison
Detailed side-by-side comparison of IRFS4010TRLPBF by Infineon and IRLZ34NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4010TRLPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.58 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | IR MOSFET (HEXFET) | β |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 180 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| RDS(on) max @ VGS=10V | 4.7 mOhm | β |
| Gate-to-Source Voltage (VGS) max | Plus or minus 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | Logic-level (5 V drive compatible) |
| Total Gate Charge (Qg) | 143 nC | 16.7 nC |
| Power Dissipation (PD) at TC=25C | 375 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | D2PAK (TO-263AB), surface mount | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage | 10 V (normal level, optimized) | β |
| RoHS Status | Compliant | Compliant (Pb-free) |
| MSL Level | 1 | β |
| Qualification | JEDEC standard | JEDEC standard |
| Continuous Drain Current (ID) at TC | β | 30 A |
| RDS(on) at VGS=5V | β | 35 mOhm (typical) |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 68 W |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single with built-in diode |
| Switching Frequency Optimization | β | Below 100 kHz |
| Cell Structure | β | HEXFET planar (5th generation) |