IRFS4227TRLPBF vs IPT022N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IRFS4227TRLPBF by Infineon and IPT022N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT022N10NF2SATMA1

IPT022N10NF2SATMA1 - 100V 2.2mΞ© StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IRFS4227TRLPBF IPT022N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.38 $0.99
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) @ Tc = 25C 62 A β€”
Maximum Power Dissipation (PD) @ Tc = 25C 330 W β€”
On-Resistance RDS(on) max @ VGS = 10V 26 mOhm β€”
Total Gate Charge (Qg) 70 nC [DATA_NEEDED: Qg typical value]
Gate-to-Source Voltage (VGS) max Β±30 V β€”
Configuration Single with built-in diode β€”
Case Connection DRAIN β€”
Technology HEXFET, IR MOSFET Trench MOSFET
Package D2PAK (TO-263), surface mount PG-HSOF-8-10 (8 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40C to +150C (TJ) -55C to +175C
MSL Level 1 (unlimited) β€”
RoHS Status Compliant Compliant
Key Application PDP Sustain / Energy Recovery Switch β€”
Manufacturer β€” Infineon Technologies
Product Family β€” StrongIRFET 2
Drain-Source Voltage (V(BR)DSS) β€” 100 V
Continuous Drain Current (Id) at Ta β€” 29 A
Continuous Drain Current (Id) at Tc β€” 236 A
Typical RDS(on) at VGS=10V β€” 2.2 mΞ©
Power Dissipation at Ta β€” 3.8 W
Power Dissipation at Tc β€” 250 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]

Datasheets & Resources

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