IRFS4321TRLPBF vs IRFS7440TRLPBF Comparison
Detailed side-by-side comparison of IRFS4321TRLPBF by Infineon and IRFS7440TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4321TRLPBF | IRFS7440TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.73 | $0.98 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | 120 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | β |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-to-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) Typ | 71 nC | β |
| Total Gate Charge (Qg) Max | 110 nC | β |
| Power Dissipation (PD) at Tc=25C | 350 W | 208 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | 0.45 C/W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| RoHS Status | Compliant | Compliant (lead-free) |
| Manufacturer | β | Infineon Technologies |
| Series | β | StrongIRFET |
| On-Resistance (RDS(on)) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | 90 nC (typical) |
| Gate Drive Voltage (optimized) | β | 10 V (normal level) |
| Operating Frequency Range (optimized) | β | <100 kHz |
| Operating Temperature Range | β | [DATA_NEEDED: junction temperature range] |
| Qualification | β | JEDEC standard |