IRFS4321TRRPBF vs IRFS4321TRLPBF Comparison
Detailed side-by-side comparison of IRFS4321TRRPBF by Infineon and IRFS4321TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4321TRRPBF | IRFS4321TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.97 | $1.73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) | β |
| Continuous Drain Current (ID) at 100C | [DATA_NEEDED: ID at 100C] | β |
| RDS(on) Maximum at VGS=10V | 15 mOhm | β |
| Total Gate Charge (Qg) | 71 nC | β |
| Gate-to-Source Voltage Maximum | +/- 30 V | β |
| Power Dissipation (PD) | 350 W (Tc) | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Package | D2PAK (TO-263), 3-pin (2+Tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) | β |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant | β |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| Continuous Drain Current (ID) at Tc=25C | β | 85 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | β | 15 mOhm |
| RDS(on) Max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | β | 71 nC |
| Total Gate Charge (Qg) Max | β | 110 nC |
| Power Dissipation (PD) at Tc=25C | β | 350 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | β | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | β | 0.65 C/W (after 1000 cycles -55C to +150C) |
| RoHS Status | β | Compliant |