IRFS52N15DPBF vs IRFB52N15DPBF Comparison

Detailed side-by-side comparison of IRFS52N15DPBF by Infineon and IRFB52N15DPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS52N15DPBF IRFB52N15DPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.15 $1.65
FET Type N-Channel β€”
Technology HEXFET (Planar Cell) HEXFET (vertical DMOS, hexagonal cell)
Drain-Source Voltage (VDS) 150 V β€”
Continuous Drain Current (ID) @ TC=25C 51 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 204 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
RDS(on) max @ VGS=10V 32 mOhm β€”
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Output Capacitance (Coss) [DATA_NEEDED: Coss] β€”
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] β€”
Power Dissipation (PD) @ TA=25C 3.8 W β€”
Power Dissipation (PD) @ TC=25C 230 W β€”
Operating Junction Temperature -55C to +175C -55 C to +175 C
Package D2PAK (TO-263) Surface Mount β€”
Mounting Type Surface Mount Through Hole
Qualification Standard JEDEC Industrial market (per IR/Infineon)
MSL Level 1 (per JEDEC J-STD-020) β€”
Lead-Free Yes β€”
RoHS Status Compliant Compliant
Drain-Source Voltage (V(BR)DSS) β€” 150 V
Continuous Drain Current (ID) at TC=25C β€” 51 A
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) β€” 32 mOhm at VGS=10V
Power Dissipation (PD) at TC=25C β€” 230 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
Package Type β€” TO-220AB (through-hole)
Polarity / Channel Type β€” N-Channel Enhancement Mode
Lead-Free Finish β€” Yes (Pb-free PBF suffix)

Datasheets & Resources

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