IRFS52N15DTRLP vs BSC190N15NS3GATMA1 Comparison
Detailed side-by-side comparison of IRFS52N15DTRLP by Infineon and BSC190N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IRFS52N15DTRLP | BSC190N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.98 |
| FET Type | N-Channel MOSFET | β |
| Technology | HEXFET (Planar) | OptiMOS 3 (N-Channel) |
| Drain-to-Source Voltage (Vdss) | 150 V | β |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | β |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | β |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | β |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.5 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | [DATA_NEEDED: total gate charge] |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | β |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | β |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 C to +150 C |
| Package | D2PAK (TO-263) surface mount | PG-TDSON-8-1 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + tab | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | 20 V |
| On-Resistance RDS(on) max at VGS=10V | β | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | β | 125 W |