IRFS52N15DTRLP vs IRFB52N15DPBF Comparison
Detailed side-by-side comparison of IRFS52N15DTRLP by Infineon and IRFB52N15DPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS52N15DTRLP | IRFB52N15DPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.65 |
| FET Type | N-Channel MOSFET | β |
| Technology | HEXFET (Planar) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | β |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | β |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | β |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | β |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | β |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | β |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Package | D2PAK (TO-263) surface mount | β |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) + tab | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | Yes (Pb-free PBF suffix) |
| MSL Level | 1 (per JEDEC J-STD-020, typical for D2PAK) | β |
| Drain-Source Voltage (V(BR)DSS) | β | 150 V |
| Continuous Drain Current (ID) at TC=25C | β | 51 A |
| Pulsed Drain Current (IDM) | β | 204 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | β | 230 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package Type | β | TO-220AB (through-hole) |
| Polarity / Channel Type | β | N-Channel Enhancement Mode |
| Qualification Standard | β | Industrial market (per IR/Infineon) |