IRFS52N15DTRLP vs IRFS4321TRLPBF Comparison
Detailed side-by-side comparison of IRFS52N15DTRLP by Infineon and IRFS4321TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS52N15DTRLP | IRFS4321TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (Planar) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (Vdss) | 150 V | β |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | β |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | β |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | β |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | β |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | β |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Package | D2PAK (TO-263) surface mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + tab | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for D2PAK) | β |
| Drain-to-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 85 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | β | 15 mOhm |
| RDS(on) Max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | β | 71 nC |
| Total Gate Charge (Qg) Max | β | 110 nC |
| Power Dissipation (PD) at Tc=25C | β | 350 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | β | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | β | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Operating Junction Temperature | β | -55C to +175C |