IRFS52N15DTRLP vs IRFS52N15DPBF Comparison
Detailed side-by-side comparison of IRFS52N15DTRLP by Infineon and IRFS52N15DPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS52N15DTRLP | IRFS52N15DPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.15 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | HEXFET (Planar) | HEXFET (Planar Cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | β |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | β |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | β |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | β |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | [DATA_NEEDED: Ciss] |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | β |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Package | D2PAK (TO-263) surface mount | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + tab | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) @ TC=25C | β | 51 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | β | 32 mOhm |
| Gate-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | β | 3.8 W |
| Power Dissipation (PD) @ TC=25C | β | 230 W |
| Operating Junction Temperature | β | -55C to +175C |
| Qualification Standard | β | JEDEC |
| Lead-Free | β | Yes |