IRFS7530TRLPBF vs IRF5210PBF Comparison

Detailed side-by-side comparison of IRFS7530TRLPBF by Infineon and IRF5210PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS7530TRLPBF IRF5210PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $2.52
Manufacturer Infineon Technologies
Part Number IRFS7530TRLPBF
Technology StrongIRFET™ (N-Channel Trench MOSFET) HEXFET (Fifth Generation)
Drain-Source Voltage (VDS) Max 60 V
Continuous Drain Current (ID) at Tc=25°C 195 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max @ VGS=10V 2 mΩ
Gate Threshold Voltage VGS(th) [DATA_NEEDED: gate threshold voltage]
Gate Charge Qg Typ [DATA_NEEDED: typical gate charge]
Total Power Dissipation (PD) at Tc=25°C 375 W
Operating Temperature Range -55 °C to +175 °C (Tj) -55 C to +175 C (junction)
Package / Case PG-TO263-2 (D2PAK, TO-263)
Mounting Type Surface Mount Through Hole
Packaging Tape & Reel (TR)
Lead-Free / RoHS Yes (PBF suffix) Yes (PBF suffix = lead-free)
Pin Configuration 3-Pin (Gate, Drain tab, Source) Gate / Drain (tab) / Source (G-D-S, front view)
Series StrongIRFET™
Transistor Type P-Channel MOSFET
Drain-Source Voltage (Vds) -100 V
Continuous Drain Current (Id) at Tc -40 A
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value]
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V)
On-Resistance Rds(on) at Vgs=-10V 60 milliohms
Total Gate Charge (Qg) 120 nC
Power Dissipation (Pd) at Tc 200 W
Package TO-220AB (through-hole)
Tab Connection Electrically tied to Drain

Datasheets & Resources

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