IRFS7530TRLPBF vs IRFB7534PBF Comparison

Detailed side-by-side comparison of IRFS7530TRLPBF by Infineon and IRFB7534PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS7530TRLPBF IRFB7534PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $1.85
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFS7530TRLPBF IRFB7534PBF
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET™ (planar N-channel)
Drain-Source Voltage (VDS) Max 60 V
Continuous Drain Current (ID) at Tc=25°C 195 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max @ VGS=10V 2 mΩ
Gate Threshold Voltage VGS(th) [DATA_NEEDED: gate threshold voltage] 3.7 V (typ)
Gate Charge Qg Typ [DATA_NEEDED: typical gate charge]
Total Power Dissipation (PD) at Tc=25°C 375 W
Operating Temperature Range -55 °C to +175 °C (Tj) -55C to +175C
Package / Case PG-TO263-2 (D2PAK, TO-263)
Mounting Type Surface Mount Through Hole
Packaging Tape & Reel (TR)
Lead-Free / RoHS Yes (PBF suffix)
Pin Configuration 3-Pin (Gate, Drain tab, Source)
Series StrongIRFET™
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) max 60 V
Continuous Drain Current (ID) at Tc=25C 195 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C 294 W
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm
Gate Charge Qg [DATA_NEEDED: total gate charge]
Avalanche Energy Rated Yes
Package TO-220AB
RoHS Status Compliant (PbF suffix)
MSL Level MSL1 (unlimited floor life)

Datasheets & Resources

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