IRFU5305PBF vs IRF5305PBF Comparison

Detailed side-by-side comparison of IRFU5305PBF by Infineon and IRF5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFU5305PBF IRF5305PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.51
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc -31 A β€”
Pulsed Drain Current (IDM) -110 A (pulsed) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 65 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) 42 nC (typical) 42 nC (typical)
Power Dissipation (PD) at Tc=25Β°C 110 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55C to +175C
Thermal Resistance Junction-to-Case (RΞΈJC) 1.36 Β°C/W β€”
Thermal Resistance Junction-to-Ambient (RΞΈJA) 62 Β°C/W β€”
Package IPAK (TO-251AA) Through-Hole, 3 pins TO-220AB (through-hole, 3-pin + tab)
Mounting Type Through Hole Through Hole
Avalanche Rated Yes (EAS rated) β€”
RoHS Compliance Compliant β€”
FET Type β€” P-Channel
Drain-to-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -31 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissition (PD) at TC=25C β€” 110 W
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V β€” 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A β€” [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) β€” [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) β€” [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) β€” [DATA_NEEDED: RthJA]
Lead-Free Plating (PBF suffix) β€” Yes (Pb-free)
RoHS Status β€” Compliant
Technology β€” HEXFET (planar DMOS)

Datasheets & Resources

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