IRFU5305PBF vs IRLR120NTRPBF Comparison

Detailed side-by-side comparison of IRFU5305PBF by Infineon and IRLR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF βœ“ Active

Specification Comparison

Parameter IRFU5305PBF IRLR120NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.27
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc -31 A β€”
Pulsed Drain Current (IDM) -110 A (pulsed) β€”
On-Resistance RDS(on) max @ VGS=-10V 65 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) 42 nC (typical) 13.3 nC
Power Dissipation (PD) at Tc=25Β°C 110 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Thermal Resistance Junction-to-Case (RΞΈJC) 1.36 Β°C/W β€”
Thermal Resistance Junction-to-Ambient (RΞΈJA) 62 Β°C/W β€”
Package IPAK (TO-251AA) Through-Hole, 3 pins TO-252AA (DPAK), 3-pin surface mount
Mounting Type Through Hole Surface Mount
Avalanche Rated Yes (EAS rated) β€”
RoHS Compliance Compliant β€”
FET Type β€” N-Channel MOSFET
Technology β€” HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 10 A
Continuous Drain Current (Id) at Tc=100C β€” [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed Idm]
Rds(on) Max at Vgs=10V β€” 185 mΞ©
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: typical Vgs(th)]
Power Dissipation (Pd) at Tc=25C β€” 48 W
Operating Temperature Range β€” -55C to +175C (junction)
Avalanche Energy Rating β€” Fully avalanche rated
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free)
MSL Level β€” 1

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