IRFU9024NPBF vs IRF520NPBF Comparison

Detailed side-by-side comparison of IRFU9024NPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFU9024NPBF

IRFU9024NPBF - -55V P-Ch HEXFET 11A 175mOhm TO-251 | Infineon

IRFU9024NPBF βœ“ Active

Specification Comparison

Parameter IRFU9024NPBF IRF520NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.66
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc=25C -11 A β€”
Pulsed Drain Current (IDM) -44 A β€”
Drain-Source On-Resistance (RDS(on)) at VGS=-10V 175 mOhm max β€”
Gate-Source Threshold Voltage (VGS(th)) -4 V max β€”
Total Gate Charge (Qg) 12.7 nC β€”
Input Capacitance (Ciss) 170 pF β€”
Output Capacitance (Coss) 92 pF β€”
Reverse Transfer Capacitance (Crss) 350 pF β€”
Power Dissipation (PD) at Tc=25C 38 W β€”
Operating Junction Temperature -55C to +175C β€”
Package IPAK (TO-251AA) Through-Hole TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Status Lead-Free, RoHS Compliant β€”
Avalanche Rated Yes β€”
Generation Fifth-Generation HEXFET β€”
Manufacturer β€” Infineon Technologies
Series β€” HEXFET
FET Type β€” N-Channel
Drain-to-Source Voltage (V_DSS) β€” 100 V
Continuous Drain Current (I_D) at Tc β€” 9.7 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max β€” Β±20 V
R_DS(on) max at V_GS=10V β€” 200 mOhm
Total Gate Charge (Q_g) β€” 16.7 nC
Power Dissipation (P_D) at Tc β€” 48 W
Operating Temperature Range β€” -55C to +175C
MSL Level β€” 1 (unlimited)
RoHS Status β€” Compliant (Pb-free)
Lead-Free Finish β€” Yes (PBF suffix)
Technology β€” HEXFET (vertical DMOS)

Datasheets & Resources

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