IRFZ34NPBF vs IRF1405PBF Comparison
Detailed side-by-side comparison of IRFZ34NPBF by Infineon and IRF1405PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ34NPBF | IRF1405PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $1.42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DSS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current rating] |
| Power Dissipation (P_D) at Tc=25C | 68 W | β |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | β |
| Gate Charge (Q_g) typ | 22.7 nC | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Maximum Junction Temperature | 175 C | β |
| Package | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | β |
| Qualification | JEDEC standard | JEDEC qualified, optimized for switching below 100 kHz |
| RoHS Status | Compliant | PbF suffix indicates lead-free / RoHS compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | β |
| Part Number Suffix | β | PbF (lead-free, RoHS compliant) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | β | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | β | [DATA_NEEDED: I_D at Tc=100C] |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 330 W |
| R_DS(on) Maximum | β | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | β | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | β | 175 C |
| Storage Temperature Range | β | [DATA_NEEDED: storage temperature range] |
| Single Pulse Avalanche Energy (E_AS) | β | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | β | [DATA_NEEDED: thermal resistance R_theta_JC] |