IRFZ34NPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRFZ34NPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ34NPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V_DSS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc=25C | 68 W | β |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | β |
| Gate Charge (Q_g) typ | 22.7 nC | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Maximum Junction Temperature | 175 C | β |
| Package | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Configuration | Single N-Channel, 3-pin (3+tab) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes (PBF suffix denotes Pb-free) |