IRFZ34NPBF vs IRFR3411TRPBF Comparison

Detailed side-by-side comparison of IRFZ34NPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ34NPBF IRFR3411TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.55
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Status Active β€”
FET Type N-Channel, Enhancement Mode MOSFET (Metal Oxide)
Technology HEXFET (Planar DMOS, 5th generation) HEXFET Power MOSFET (IR)
Drain-Source Voltage (V_DSS) 55 V β€”
Continuous Drain Current (I_D) at Tc=25C 29 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (P_D) at Tc=25C 68 W β€”
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm β€”
Gate Charge (Q_g) typ 22.7 nC β€”
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] β€”
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] β€”
Operating Temperature Range -55 C to +175 C -55 C to +175 C
Maximum Junction Temperature 175 C 175 C
Package TO-220AB (3-pin + tab, through-hole) TO-252AA (DPAK)
Mounting Type Through Hole Surface Mount
Lead-Free Status Yes (Pb-free, RoHS compliant) β€”
Qualification JEDEC standard β€”
RoHS Status Compliant β€”
Configuration Single N-Channel, 3-pin (3+tab) β€”
Polarity β€” N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 100 V
RDS(on) max @ VGS=10V β€” 44 mOhm
Continuous Drain Current (Id) @ Tc β€” 32 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc β€” 130 W
Gate Charge (Qg) β€” 48 nC
Operating Mode β€” Enhancement
Number of Pins β€” 3
Avalanche Rated β€” Yes (fully avalanche rated)
dv/dt Rating β€” Dynamic dv/dt rated
Lead-Free / RoHS β€” Yes (Lead-free, PBF suffix)

Datasheets & Resources

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