IRFZ34NPBF vs IRFZ24NPBF Comparison
Detailed side-by-side comparison of IRFZ34NPBF by Infineon and IRFZ24NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ34NPBF | IRFZ24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET planar cell |
| Drain-Source Voltage (V_DSS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc=25C | 68 W | β |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | β |
| Gate Charge (Q_g) typ | 22.7 nC | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Maximum Junction Temperature | 175 C | β |
| Package | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | β |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | β |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 17 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | β | Β± 20 V |
| RDS(on) at VGS=10V | β | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | β | 13.3 nC |
| Power Dissipation (PD) at TC=25C | β | 45 W |
| Operating Junction Temperature | β | -55C to +175C |
| Switching Frequency Range | β | Optimized for < 100 kHz |
| Lead-Free | β | Yes (PBF suffix) |
| Channel Mode | β | Enhancement |