IRFZ44NPBF vs FDP030N06 Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and FDP030N06 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF FDP030N06
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $1.89
FET Type N-Channel N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm β€”
Total Gate Charge (Qg) 42 nC β€”
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (3-pin + tab) TO-220-3 (3+Tab)
Mounting Type Through Hole Through Hole
Technology HEXFET (Advanced Process) PowerTrench (Trench)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant [DATA_NEEDED: RoHS compliance status]
Drain to Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) @ 25C β€” 120 A (Tc)
Continuous Drain Current (datasheet rating) β€” 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs β€” 3.2 mOhm
RDS(on) Typ β€” 2.6 mOhm
Power Dissipation (Tc) β€” 231 W (Tc)
Gate Drive Type β€” Standard level gate drive
Switching Speed β€” Fast
Gate Input Resistance β€” Low gate input resistance (low gate charge)
Avalanche Test β€” 100% avalanche tested
Packing β€” Tube
Typical Applications β€” Power supply, switching applications

Datasheets & Resources

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