IRFZ44NPBF vs IRF1407PBF Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF IRF1407PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.86
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm β€”
Total Gate Charge (Qg) 42 nC β€”
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (3-pin + tab) TO-220AB (through-hole, 3 leads)
Mounting Type Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (stripe-planar MOSFET)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant β€”
Drain-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID) at TC=25C β€” 130 A
Power Dissipation (PD) at TC=25C β€” 330 W
On-Resistance RDS(on) at VGS=10V β€” 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) β€” 160 nC (typical)
Maximum Junction Temperature β€” 175 C
Operating Temperature Range β€” -55 C to +175 C
Lead-Free / RoHS β€” Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating β€” Repetitive avalanche rated

Datasheets & Resources

Browse All Products Create BOM Request Quote