IRFZ44NPBF vs IRF5210PBF Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRF5210PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF IRF5210PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $2.52
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm β€”
Total Gate Charge (Qg) 42 nC 120 nC
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (3-pin + tab) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (Fifth Generation)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant β€”
Transistor Type β€” P-Channel MOSFET
Drain-Source Voltage (Vds) β€” -100 V
Continuous Drain Current (Id) at Tc β€” -40 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current value]
Gate-Source Threshold Voltage (Vgs(th)) β€” -2 V to -4 V (typical -2 V)
On-Resistance Rds(on) at Vgs=-10V β€” 60 milliohms
Power Dissipation (Pd) at Tc β€” 200 W
Operating Temperature Range β€” -55 C to +175 C (junction)
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)
Tab Connection β€” Electrically tied to Drain
Pin Configuration β€” Gate / Drain (tab) / Source (G-D-S, front view)

Datasheets & Resources

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