IRFZ44NPBF vs IRF530NPBF Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRF530NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF IRF530NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.38
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm 90 mOhm (max, approximate per datasheet)
Total Gate Charge (Qg) 42 nC β€”
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C -55 C to +175 C
Package TO-220AB (3-pin + tab) β€”
Mounting Type Through Hole Through Hole
Technology HEXFET (Advanced Process) β€”
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant Compliant
Part Number β€” IRF530NPBF
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Transistor Type β€” N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc β€” 17 A
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc β€” 70 W
Package / Case β€” TO-220AB (through-hole)
Avalanche Rated β€” Yes
MSL Level β€” N/A (through-hole)
Configuration β€” Single N-channel, 3 pins (Gate, Drain, Source)

Datasheets & Resources

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