IRFZ44NPBF vs IRFZ44NSTRLPBF Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRFZ44NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.93
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm β€”
Total Gate Charge (Qg) 42 nC 42 nC
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (3-pin + tab) D2PAK (TO-263)
Mounting Type Through Hole Surface Mount
Technology HEXFET (Advanced Process) HEXFET
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant Compliant
Polarity β€” N-Channel
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC β€” 49 A
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Drain-Source On-Resistance RDS(on) max β€” 17.5 mOhm at VGS=10V
Power Dissipation (TC) β€” 94 W
Power Dissipation (TA) β€” 3.8 W
Operating Temperature Range β€” -55C to +175C
Lead-Free (PBF suffix) β€” Yes

Datasheets & Resources

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