IRFZ44NSTRLPBF vs IRF540NSTRLPBF Comparison

Detailed side-by-side comparison of IRFZ44NSTRLPBF by Infineon and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRFZ44NSTRLPBF IRF540NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.93 $0.74
Polarity N-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC 49 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V β€”
Total Gate Charge (Qg) 42 nC β€”
Power Dissipation (TC) 94 W β€”
Power Dissipation (TA) 3.8 W β€”
Operating Temperature Range -55C to +175C -55 C to +175 C
Package D2PAK (TO-263) D2PAK (TO-263), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET HEXFET (IR MOSFET)
RoHS Status Compliant Compliant (Pb-free)
Lead-Free (PBF suffix) Yes β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 33 A
Pulsed Drain Current (Idm) β€” 110 A (per datasheet pulse curve)
On-Resistance Rds(on) max at Vgs=10V β€” 44 mOhm
Gate Threshold Voltage Vgs(th) β€” 2.0 V to 4.0 V
Total Gate Charge Qg β€” 47.3 nC (typical)
Power Dissipation (Pd) at Tc=25C β€” 130 W
Packaging β€” Tape & Reel (13-inch reel)
Avalanche Energy Rated β€” Yes (HEXFET ruggedized)

Datasheets & Resources

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