IRFZ44NSTRLPBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRFZ44NSTRLPBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NSTRLPBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.93 $0.65
Polarity N-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC 49 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V β€”
Total Gate Charge (Qg) 42 nC 42 nC
Power Dissipation (TC) 94 W β€”
Power Dissipation (TA) 3.8 W β€”
Operating Temperature Range -55C to +175C β€”
Package D2PAK (TO-263) TO-220AB (3-pin + tab)
Mounting Type Surface Mount Through Hole
Technology HEXFET HEXFET (Advanced Process)
RoHS Status Compliant Compliant
Lead-Free (PBF suffix) Yes β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Operating Junction Temperature β€” -55C to +175C
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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