IRL3705NPBF vs IRF1018EPBF Comparison
Detailed side-by-side comparison of IRL3705NPBF by Infineon and IRF1018EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL3705NPBF | IRF1018EPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.38 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc | 89 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc | 170 W | β |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | 65.3 nC | β |
| Maximum Junction Temperature | 175 C | β |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (Power MOSFET) |
| Package | TO-220AB (3-pin through-hole) | TO-220AB (through-hole, 3-lead) |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Level | Logic-level | β |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | β |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS Status | Compliant (per PBF suffix) | Compliant |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25C | β | 79 A |
| Rds(on) max at Vgs=10V | β | 8.4 mOhm |
| Total Gate Charge (Qg) | β | 46 nC |
| Gate Drive Voltage (Vgs) | β | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | β | 110 W |
| Operating Temperature Range | β | -55 C to +175 C (Tj) |
| Qualification | β | JEDEC (Industrial market) |
| Pin Count | β | 3 (Gate, Drain, Source) |