IRL3705NPBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRL3705NPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL3705NPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.62 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc | 89 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc | 170 W | β |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | 65.3 nC | β |
| Maximum Junction Temperature | 175 C | β |
| Technology | HEXFET (planar cell, fifth generation) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Package | TO-220AB (3-pin through-hole) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Level | Logic-level | β |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | Yes (improved Z-variant ruggedness) |
| Lead-Free (PBF suffix) | Yes | β |
| RoHS Status | Compliant (per PBF suffix) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |