IRL3705NPBF vs IRFB7534PBF Comparison

Detailed side-by-side comparison of IRL3705NPBF by Infineon and IRFB7534PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRL3705NPBF IRFB7534PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $1.85
FET Type N-Channel β€”
Drain-Source Voltage (V_DS) 55 V β€”
Continuous Drain Current (I_D) at Tc 89 A β€”
Pulsed Drain Current [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (P_D) at Tc 170 W β€”
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) β€”
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge Q_g 65.3 nC β€”
Maximum Junction Temperature 175 C β€”
Technology HEXFET (planar cell, fifth generation) StrongIRFETβ„’ (planar N-channel)
Package TO-220AB (3-pin through-hole) TO-220AB
Mounting Type Through Hole Through Hole
Gate Drive Level Logic-level β€”
Avalanche Rated Yes (ruggedized single-pulse avalanche) β€”
Lead-Free (PBF suffix) Yes β€”
RoHS Status Compliant (per PBF suffix) Compliant (PbF suffix)
Manufacturer β€” Infineon Technologies
Part Number β€” IRFB7534PBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 60 V
Continuous Drain Current (ID) at Tc=25C β€” 195 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C β€” 294 W
On-Resistance RDS(on) max at VGS=10V β€” 2.4 mOhm
Gate Threshold Voltage VGS(th) β€” 3.7 V (typ)
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Avalanche Energy Rated β€” Yes
Operating Temperature Range β€” -55C to +175C
MSL Level β€” MSL1 (unlimited floor life)

Datasheets & Resources

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