IRL540NSTRLPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRL540NSTRLPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRL540NSTRLPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $0.38
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID) at Tc=25Β°C 36 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΞ© β€”
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] β€”
Gate-Source Voltage (VGS) max Β±16 V Β±20 V
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) 49.3 nC β€”
Power Dissipation (PD) at Tc=25Β°C 140 W β€”
Power Dissipation (PD) at TA=25Β°C 3.8 W β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package TO-263 (D2PAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) β€”
RoHS Status Compliant (LPBF suffix indicates lead-free) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -31 A
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Technology β€” HEXFET fifth-generation planar MOSFET
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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