IRL540NSTRLPBF vs IRLR3114ZTRPBF Comparison

Detailed side-by-side comparison of IRL540NSTRLPBF by Infineon and IRLR3114ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRL540NSTRLPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $0.46
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Tc=25Β°C 36 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 130 A
On-Resistance (RDS(on)) max @ VGS=10V 44 mΞ© β€”
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] β€”
Gate-Source Voltage (VGS) max Β±16 V 16 V
Gate Threshold Voltage (VGS(th)) Logic-level 2.5 V (typ)
Total Gate Charge (Qg) 49.3 nC 40 nC @ VGS=4.5 V
Power Dissipation (PD) at Tc=25Β°C 140 W β€”
Power Dissipation (PD) at TA=25Β°C 3.8 W β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package TO-263 (D2PAK) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) β€”
RoHS Status Compliant (LPBF suffix indicates lead-free) Compliant
MSL Level [DATA_NEEDED: MSL rating] β€”
Transistor Type β€” N-Channel MOSFET
Technology β€” HEXFET (IR MOSFET)
Continuous Drain Current (ID, Tc=25 C) β€” 42 A
Continuous Drain Current (ID, Tc=100 C) β€” 30 A
On-Resistance RDS(on) max @ VGS=10V β€” 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V β€” 4.9 mOhm
Input Capacitance (Ciss) β€” 3.81 nF
Power Dissipation (Pd, Tc=25 C) β€” 140 W
Operating Junction Temperature β€” -55 C to +175 C
Number of Pins β€” 3 (2 + tab)

Datasheets & Resources

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