IRLB3813PBF vs IRF1405PBF Comparison
Detailed side-by-side comparison of IRLB3813PBF by Infineon and IRF1405PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLB3813PBF | IRF1405PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.42 |
| FET Type | N-Channel | β |
| Technology | StrongIRFET (HEXFET) | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc=25C | 260 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | β |
| Power Dissipation (PD) at Tc=25C | 230 W | β |
| Operating Junction Temperature | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | β |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | β |
| Qualification Standard | JEDEC (industrial market) | β |
| RoHS Status | Compliant (Pb-free suffix PBF) | PbF suffix indicates lead-free / RoHS compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | β | PbF (lead-free, RoHS compliant) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | β | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | β | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 330 W |
| R_DS(on) Maximum | β | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | β | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | β | 175 C |
| Storage Temperature Range | β | [DATA_NEEDED: storage temperature range] |
| Qualification | β | JEDEC qualified, optimized for switching below 100 kHz |
| Single Pulse Avalanche Energy (E_AS) | β | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | β | [DATA_NEEDED: thermal resistance R_theta_JC] |