IRLB4030PBF vs IRFB4310PBF Comparison
Detailed side-by-side comparison of IRLB4030PBF by Infineon and IRFB4310PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLB4030PBF | IRFB4310PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $1.95 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | 7 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 87 nC | 170 nC |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | β |
| Power Dissipation (PD) at Tc | 370 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction) |
| Package | TO-220AB | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (StrongIRFET family) | HEXFET (IR MOSFET) |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | β |
| Qualification | JEDEC | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc=25C | β | 130 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | β | 300 W |
| On-Resistance RDS(on) typical at VGS=10V | β | 5.6 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | β | Yes |
| Lead-Free | β | Yes (Pb-free PBF suffix) |