IRLB4030PBF vs IRFR120NTRPBF Comparison

Detailed side-by-side comparison of IRLB4030PBF by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF βœ“ Active

Specification Comparison

Parameter IRLB4030PBF IRFR120NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $0.26
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 180 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 87 nC β€”
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] β€”
Power Dissipation (PD) at Tc 370 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB TO-252AA (DPAK)
Mounting Type Through Hole Surface Mount
Technology HEXFET (StrongIRFET family) HEXFET (IR MOSFET fifth generation)
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) β€”
Qualification JEDEC β€”
RoHS Status Compliant β€”
Continuous Drain Current (ID) at TC=25C β€” 9.4 A
Maximum Power Dissipation (PD) at TC=25C β€” 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max β€” 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) β€” 2 V to 4 V typical
Total Gate Charge (Qg) typical β€” 16.7 nC
Gate-to-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: Crss]
Operating Junction Temperature Range β€” -55C to +175C
Channel Type β€” N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max β€” [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status β€” Lead-Free, RoHS Compliant

Datasheets & Resources

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