IRLB4030PBF vs IRLR2908TRPBF Comparison

Detailed side-by-side comparison of IRLB4030PBF by Infineon and IRLR2908TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB4030PBF IRLR2908TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $0.55
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 180 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 87 nC β€”
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] β€”
Power Dissipation (PD) at Tc 370 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB TO-252AA (DPAK), surface mount
Mounting Type Through Hole Surface Mount
Technology HEXFET (StrongIRFET family) HEXFET (IR MOSFET)
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) β€”
Qualification JEDEC β€”
RoHS Status Compliant β€”
Drain-Source Voltage (Vds) β€” 80 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: Idm pulsed value]
On-Resistance RDS(on) max @ Vgs=10V β€” 28 mOhm
On-Resistance RDS(on) typ @ Vgs=10V β€” 22.5 mOhm
Gate Charge (Qg) typ β€” 22 nC
Power Dissipation (Pd) at Tc=25C β€” 120 W
Operating Junction Temperature β€” -55C to +175C
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) range]
Configuration β€” Single with built-in diode
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free)

Datasheets & Resources

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