IRLB4132PBF vs IRF3205ZSTRLPBF Comparison

Detailed side-by-side comparison of IRLB4132PBF by Infineon and IRF3205ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLB4132PBF IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220

IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220

IRLB4132PBF βœ“ Active
Infineon
IRF3205ZSTRLPBF IRF3205ZSTRLPBF - 55V 110A N-Channel HEXFET MOSFET | Infineon

IRF3205ZSTRLPBF - 55V 110A N-Channel HEXFET MOSFET | Infineon

IRF3205ZSTRLPBF βœ“ Active

Specification Comparison

Parameter IRLB4132PBF IRF3205ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $1.45
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Transistor Type N-Channel MOSFET (HEXFET) β€”
Drain-Source Voltage (VDS) 30 V 55 V
Continuous Drain Current (ID, Tc=25C) 78 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD, Tc=25C) 140 W β€”
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) β€”
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V β€”
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C β€”
Package / Case TO-220AB (through-hole, 3 leads) β€”
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (Pb-free PBF suffix) β€”
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) β€”
FET Type β€” N-Channel
Technology β€” HEXFET (IR MOSFET)
Continuous Drain Current (ID) at Tc=25C β€” 110 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max @ VGS=10V β€” 6.5 mOhm
Gate-Source Voltage (VGS) max β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) β€” 76 nC
Power Dissipation (PD) at Tc=25C β€” 170 W
Operating Junction Temperature β€” -55C to +175C
Package β€” D2PAK (TO-263)
Packaging β€” Tape & Reel (left reel)
RoHS Status β€” Compliant
MSL Level β€” 1
Body Diode β€” Avalanche-rated intrinsic

Datasheets & Resources

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