IRLB4132PBF vs IRFB3306PBF Comparison
Detailed side-by-side comparison of IRLB4132PBF by Infineon and IRFB3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLB4132PBF | IRFB3306PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Transistor Type | N-Channel MOSFET (HEXFET) | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Tc=25C) | 78 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | β |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | β |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | β |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package / Case | TO-220AB (through-hole, 3 leads) | β |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | β |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | β |
| FET Type | β | N-Channel |
| Technology | β | IR HEXFET (MOSFET) |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25Β°C | β | 120 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Rds(on) max @ Vgs=10V | β | 4.2 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | β | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | β | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25Β°C | β | 230 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Package | β | TO-220AB (through-hole) |
| RoHS / Lead-Free (PbF) | β | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Avalanche Rated | β | Yes |
| Body Diode | β | Intrinsic (avalanche-rated) |